t4 - lds -0 305 -2, rev . 1 ( 7/ 30 /13 ) ?201 3 microsemi corporation page 1 of 7 2n5415 u4 C 2n5416u4 compliant pn p silicon low - power transistor qualified per mil - prf - 19500/ 485 qualified levels : jan, jantx , jantxv and jans description this family of 2n5415 u4 and 2n5416 u4 epita xial planar transistors are military qualified up to a jans level for high - reliability applications . these devices are also available in the long - leaded to -5 , short - leaded to - 39 and low profile ua packaging. u4 package also available in : to -5 packa ge ( long - leaded) 2n5415 C 2n5416 to - 39 (to - 205ad) package ( short - leaded ) 2n5415 s C 2n5416 s u a package (surface mount) 2n5415ua C 2n5416ua important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n 5415 through 2n 5416 series ? jan, jantx, jantxv, and jans qualifications are available per mil - prf - 19500/ 485 . (see part nomenclature for all available options.) ? rohs compliant applicati ons / benefits ? general purpose transistors for low power applications requiring high frequency switching ? l ow package profile ? military and other high - reliability applications maximum ratings @ t a = +25 oc unless otherwise noted msc C law rence 6 lake st reet, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol 2n5415 u4 2n5416 u4 unit colle ctor - emitter voltage v ceo 200 30 0 v collector - base voltage v cbo 200 3 50 v emitter - base voltage v ebo 6.0 6.0 v collector current i c 1.0 1.0 a operating & storage junction temperature range t j , t stg - 65 to +200 c thermal resistance junction - to - ambient r ? ja 145 o c/w thermal resistance junction - to - case r ? jc 12 o c/w total power dissipation @ t a = +25 c (1) @ t c = + 25 c (2) p t 1 15 w notes : 1. derate linearly 6. 90 mw/c for t a > +25 c 2. derate linearly 86 mw/c for t c > +25 c downloaded from: http:///
t4 - lds -0 305 -2, rev . 1 ( 7/ 30 /13 ) ?201 3 microsemi corporation page 2 of 7 2n5415 u4 C 2n5416u4 mechanical and packaging ? case: hermetically sealed, aluminum nitride (aln) ceramic body with gold over nickel pl ated kovar lid ? terminals: gold over nickel pl ated surface mount terminations ? marking: part number, date code, manufacturers id ? polarity: pnp ? tape & r eel option: standard per eia - 481d. consult factory for quantities ? weight: approximately 0.125 grams (125 milligrams) ? see package dimensions on last page. part nomenclature jan 2n5415 u4 reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = commercial s md package jedec type number (see electrical characteristics table) symbols & definitions symbol definitio n c obo c ommon - base open - circuit output capacitance i ceo c ollector cutoff current, base open i cex c ollector cutoff current, circuit between base and emitter i ebo e mitter cutoff current, collector open h fe c ommon - emitter static forward current transfer ratio v ceo c ollector - emitter voltage, base open v cbo c ollector - emitter voltage, emitter open v ebo e mitter - base voltage, collector open downloaded from: http:///
t4 - lds -0 305 -2, rev . 1 ( 7/ 30 /13 ) ?201 3 microsemi corporation page 3 of 7 2n5415 u4 C 2n5416u4 electrical characteristics @ t a = +25 c, unless otherwise noted off character istics parameters / test condition s symbol min. max. unit collector - emitter breakdown voltage v (br)ceo 200 300 v i c = 5 0 ma, i b = 5 ma, l = 25 mh; f = 30 C 60 hz 2n5415 u4 2n5416 u4 emitter - base cutoff current v eb = 6 .0 v i ebo 20 a collector - emitter cutoff current i cex 50 a v ce = 200 v, v be = 1.5 v v ce = 3 00 v, v be = 1.5 v 2n5415 u4 2n5416 u4 collector - emitter cutoff current i ceo1 50 a v ce = 150 v v ce = 250 v 2n5415 u4 2n5416 u4 collector - emitter cutoff current i ceo2 1 ma v ce = 200 v v ce = 300 v 2n5415 u4 2n5416 u4 collector - base cutoff current i cbo1 50 a v cb = 175 v v cb = 280 v 2n5415 u4 2n5416 u4 v cb = 200 v v cb = 350 v 2n5415 u4 2n5416 u4 i cbo2 500 a v cb = 175 v, t a = +150 oc v cb = 280 v, t a = +150 oc 2n5415 u4 2n5416 u4 i cbo3 1 ma on characteristic s parameters / test conditions symbol min. max. unit forward - current transfer ratio i c = 50 ma, v ce = 10 v i c = 1 m a, v ce = 10 v i c = 5 0 m a, v ce = 10 v , t a = +150 oc h fe 30 15 15 120 collector - emitter saturation voltage i c = 50 m a, i b = 5 ma v ce(sat) 2.0 v base - emitter voltage non - saturation i c = 50 m a, v ce = 10 v v be 1.5 v dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of common emitter small - signal short - |h fe | 3 15 circuit forward current transfer ratio i c = 1 0 ma, v ce = 10 v, f = 5 mhz small - signal short circuit forward - current h fe 25 transfer ratio i c = 5 ma, v ce = 10 v, f 1 khz output capacitance v cb = 10 v, i e = 0, 100 khz f 1 m hz c obo 15 pf downloaded from: http:///
t4 - lds -0 305 -2, rev . 1 ( 7/ 30 /13 ) ?201 3 microsemi corporation page 4 of 7 2n5415 u4 C 2n5416u4 electrical characterist ics @ t a = +25 c unless otherwise noted. (continued) switching characteristics parameters / test conditions symbol min. max. unit turn - on time v cc = 200 v, i c = 5 0 m a, i b1 = 5 ma t on 1 s turn - off time v cc = 200 v, i c = 5 0 m a, i b1 = i b2 = 5 ma t of f 10 s safe operating area (see soa graph below and mil - std - 750, method 3053 ) dc tests t c = +25 c, t p = 0.4 s, 1 cycle test 1 v ce = 1 0 v, i c = 1 a test 2 v ce = 100 v, i c = 10 0 ma test 3 v ce = 20 0 v, i c = 24 ma test 4 v ce = 30 0 v, i c = 10 ma see soa graphs on next page downloaded from: http:///
t4 - lds -0 305 -2, rev . 1 ( 7/ 30 /13 ) ?201 3 microsemi corporation page 5 of 7 2n5415 u4 C 2n5416u4 safe operating area v ce C collector C emitter voltage C v maximum safe operating area (t j = 200 oc , u4 on copper sink t c = 25 oc) v ce C collector C emitter voltage C v maximum safe operating area (t j = 200 oc) i c C collector current - a i c C c ollector current - a downloaded from: http:///
t4 - lds -0 305 -2, rev . 1 ( 7/ 30 /13 ) ?201 3 microsemi corporation page 6 of 7 2n5415 u4 C 2n5416u4 graphs time (s) figure 1 thermal impedance graph ( r ? ja ) theta ( o c/w) downloaded from: http:///
t4 - lds -0 305 -2, rev . 1 ( 7/ 30 /13 ) ?201 3 microsemi corporation page 7 of 7 2n5415 u4 C 2n5416u4 package dimensions notes: 1. dimensions are in inches. 2. millimeter equi valents are given for information only. 3. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensions ltr inch millimeters min max min max bl 0.215 0.225 5.46 5.72 bw 0.145 0.155 3.68 3.94 ch 0.04 9 0.075 1.24 1.91 lh - 0.0 2 - 0.51 lw1 0.135 0.145 3.43 3.68 lw2 0.047 0.057 1.19 1.45 ll1 0.085 0.125 2.16 3.1 8 ll2 0.045 0.0 75 1.14 1.91 ls1 0.070 0.095 1.78 2.41 ls2 0.035 0.048 0.89 1.2 2 q1 0.03 0 0.070 0.76 1.78 q2 0.02 0 0.035 0.51 0.8 9 terminal 1 collector 2 base 3 emitter downloaded from: http:///
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